MIG150J6CSB1W 2004-10-01 1/10 mitsubishi semiconductor MIG150J6CSB1W (600v/150a 6in1) high power switching applications motor control applications ? integrates inverter and control circuits (igbt drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. ? the electrodes are isolated from case. ? low thermal resistance ? v ce (sat) = 1.9 v (typ.) ? ul recognized: file no. e87989 equivalent circuit 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) 16 19 20 n p 18 17 14 13 15 4 3 2 1 8 7 6 5 12 11 10 9 gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd u v w b
MIG150J6CSB1W 2004-10-01 2/10 package dimensions 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG150J6CSB1W 2004-10-01 3/10 signal terminal layout 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG150J6CSB1W 2004-10-01 4/10 maximum ratings (t j = 25c) stage characteristics condition symbol ratings unit supply voltage p-n power terminal v cc 450 v collector-emitter voltage ? v ces 600 v collector current tc = 25c, dc i c 150 a forward current tc = 25c, dc i f 150 a collector power dissipation tc = 25c, dc p c 740 w inverter junction temperature ? t j 150 c control supply voltage v d -gnd terminal v d 20 v input voltage in-gnd terminal v in 20 v fault output voltage fo-gnd terminal v fo 20 v control fault output current fo sink current i fo 14 ma operating temperature ? tc ? 20 to + 100 c storage temperature range ? t stg ? 40 to + 125 c isolation voltage ac 1 min v iso 2500 v screw torque (terminal) m4 ? 2 n ? m module screw torque (mounting) m5 ? 3 n ? m electrical characteristics 1. inverter stage characteristics symbol test condition min typ. max unit t j = 25c ? ? 1 collector cut-off current i cex v ce = 600 v t j = 125c ? ? 10 ma t j = 25c 1.6 1.9 2.3 collector-emitter saturation voltage v ce (sat) v d = 15 v i c = 150 a v in = 15 v 0 v t j = 125c ? 2.1 ? v forward voltage v f i f = 150 a, t j = 25c ? 2.4 2.8 v t on ? 1.3 2.2 t c (on) ? 0.3 ? t rr ? 0.2 ? t off ? 1.1 2.1 switching time t c (off) v cc = 300 v, i c = 150 a v d = 15 v, v in = 15 v ? 0 v t j = 25c, inductive load (note 1) ? 0.2 ? s note 1: switching time test circuit and timing chart
MIG150J6CSB1W 2004-10-01 5/10 2. control stage (t j = 25c) characteristics symbol test condition min typ. max unit high side i d (h) ? 13 17 control circuit current low side i d (l) v d = 15 v ? 39 51 ma input on signal voltage v in (on) 1.4 1.6 1.8 v input off signal voltage v in (off) v d = 15 v 2.2 2.5 2.8 v protection i fo (on) ? 10 12 fault output current normal i fo (off) v d = 15 v ? ? 0.1 ma over current protection trip level inverter oc v d = 15 v, t j < = ? ? a short circuit protection trip level inverter sc v d = 15 v, t j < = ? ? a over current cut-off time t off (oc) v d = 15 v ? 5 ? s trip level ot 110 118 125 over temperature protection reset level otr case temperature ? 98 ? c trip level uv 11.0 12.0 12.5 control supply under voltage protection reset level uvr ? 12.0 12.5 13.0 v fault output pulse width t fo v d = 15 v 1 2 3 ms 3. thermal resistance (tc = 25c) characteristics symbol test condition min typ. max unit inverter igbt ? ? 0.167 junction to case thermal resistance r th (j-c) inverter frd ? ? 0.313 c/w case to fin thermal resistance r th (c-f) compound is applied ? 0.017 ? c/w
MIG150J6CSB1W 2004-10-01 6/10 switching time test circuit timing chart 2.5 v 1.6 v 15 v 10% 10% t off t c (o ff ) 10% 10% t o n t c (o n ) 90% i rr t rr 0 i rr 20% i rr input pulse v in waveform i c waveform v ce waveform 90% pg tlp559 (igm) intelligent power module v d in gnd out v s gnd u ( v, w ) p v cc v d in gnd out v s gnd i f = 16 ma n 15 v 0.1 ? ?
MIG150J6CSB1W 2004-10-01 7/10 4. recommended conditions for application characteristics symbol test condition min typ. max unit supply voltage v cc p-n power terminal ? 300 400 v control supply voltage v d v d -gnd signal terminal 13.5 15 16.5 v carrier frequency f c pwm control ? ? 20 khz dead time t dead switching time test circuit (see page.6) (note 2) 3 ? ? s note 2: the table lists dead time requirements for the module input, excluding photocoupler delays. when specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. dead time timing chart t dead 15 v v in waveform v in waveform 0 15 v 0 t dead
MIG150J6CSB1W 2004-10-01 8/10 forward current i f (a) switching time ( s) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) switching time ? i c switching time ( s) collector current i c (a) switching time ? i c forward voltage v f (v) i f ? v f forward current i f (a) t rr , i rr ? i f peak reverse recovery current i rr (a) reverse recovery time t rr ( 10 ns) 10 0.01 0 50 200 0.1 1 t j = 25c v cc = 300 v v d = 15 v l-load t on t off t c ( on ) t c ( off ) 0.03 0.05 0.3 0.5 3 5 100 150 100 1 0 50 100 200 3 30 150 common cathode :t j = 25c :t j = 125c i rr 10 t rr 0 0 1 3 2 4 common cathode :t j = 25c :t j = 125c 50 100 150 200 300 250 10 0.01 0 50 200 0.1 1 t j = 125c v cc = 300 v v d = 15 v l-load t on t off t c ( on ) t c ( off ) 0.03 0.05 0.3 0.5 3 5 100 150 300 0 0 1 3 4 50 100 200 2 150 v d = 17 v common emitter t j = 125c 13 v 15 v 250 300 0 0 1 3 4 50 100 200 2 150 v d = 17 v common emitter t j = 25c 13 v 15 v 250
MIG150J6CSB1W 2004-10-01 9/10 transient thermal resistance r th (t) (c / w) collector current i c (a) case temperature t c (c) oc ? t c over current protection trip level oc (a) carrier frequency f c (khz) i d (h) ? f c high side control circuit current i d (h) (ma) carrier frequency f c (khz) i d (l) ? f c low side control circuit current i d (l) (ma) collector-emitter voltage v ce (v) reverse bias soa pulse width tw (s) r th (t) ? tw inverter stage 1 0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 10 tc = 25c diode transistor 400 0 0 25 75 150 200 300 50 100 125 100 v d = 15 v inverter stage oc 280 0 0 200 600 240 200 120 40 400 t j < = = 15 v 160 80 100 300 700 500 30 0 0 5 15 25 15 20 10 25 10 5 20 v d = 15 v t j = 25c 120 0 0 5 15 25 60 80 10 100 40 20 20 v d = 15 v t j = 25c
MIG150J6CSB1W 2004-10-01 10/10 turn on loss ? i c turn off loss ? i c collector current i c (a) collector current i c (a) turn off loss eoff (mj) turn on loss eon (mj) 0.01 0 0.1 1 100 10 100 200 50 150 v cc = 300 v v d = 15 v l-load : tj = 25c : tj = 125c 0.01 0 0.1 1 100 10 100 200 50 150 v cc = 300 v v d = 15 v l-load : tj = 25c : tj = 125c
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